CY62136ESL-45ZSXI

The CY62136ESL is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. The input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, both Byte High Enable and Byte Low Enable are disabled or during a write operation . To write to the device, take Chip Enable and Write Enable inputs LOW. If Byte Low Enable is LOW, then data from I/O pins is written into the location specified on the address pins. If Byte High Enable is LOW, then data from I/O pins is written into the location specified on the address pins. To read from the device, take Chip Enable and Output Enable LOW while forcing the Write Enable HIGH. If Byte Low Enable is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7.If Byte High Enable is LOW, then data from memory appears on I/O8 to I/O15.

• Very high speed: 45 ns
• Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
• Ultra low standby power
  • Typical standby current: 1 µA
  • Maximum standby current: 7 µA
• Ultra low active power
  • Typical active current: 2 mA at f = 1 MHz
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Available in Pb-free 44-pin thin small outline package (TSOP) II package