CY62126EV30LL-55BVXET
SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 48-Pin VFBGA T/R
The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
- High speed: 45 ns
- Temperature ranges
- Industrial: -40 °C to +85 °C
- Automotive-A: -40 °C to +85 °C
- Automotive-E: -40 °C to +125 °C
- Wide voltage range: 2.2 V to 3.6 V
- Pin compatible with CY62126DV30
- Ultra low standby power
- Typical standby current: 1 µA
- Maximum standby current: 4 µA
- Ultra low active power
- Typical active current: 1.3 mA at f = 1 MHz
- Easy memory expansion with CE/ and OE/ and features
- Automatic power down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Offered in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin thin small outline package (TSOP) II packages
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 16 Bit | ||
| 1 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 35 mA | ||
| 55 ns | ||
| 1 Mbit | ||
| Surface Mount | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 64 kWords | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 48VFBGA | ||
| 48 | ||
| 8 x 6 x 0.74 mm | ||
| No | ||
| Automotive | ||
| VFBGA | ||
| 3 V | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | 3A991B2A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: