CY15B256J-SXAT

The CY15B256J is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the CY15B256J performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. F-RAM also exhibits much lower power during writes than EEPROM because write operations do not require an internally elevated power supply voltage for write circuits. The CY15B256J is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the CY15B256J ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.The CY15B256J provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an Automotive-A temperature range of -40 °C to +85 °C.

• 256-Kbit ferroelectric random access memory (F-RAM)logically organized as 32K × 8
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention
  • No Delay™ writes
  • Advanced high-reliability ferroelectric process
• Fast two-wire serial interface (I²C)
  • Up to 3.4-MHz frequency
  • Direct hardware replacement for serial EEPROM
  • Supports legacy timings for 100 kHz and 400 kHz
• Device ID
  • Manufacturer ID and Product ID
• Low power consumption
  • 175-µA active current at 100 kHz
  • 150-µA standby current
  • 8-µA sleep mode current
• Low-voltage operation: Vdd = 2.0 V to 3.6 V
• Automotive-A temperature: -40 °C to +85 °C
• 8-pin small outline integrated circuit (SOIC) package
• Restriction of hazardous substances (RoHS) compliant