CY15B116QN-40BKXI

CY15B116QN-40BKXI is an EXCELON™ LP non-volatile ferroelectric RAM (F-RAM). This is a low-power, 16Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. It is capable of supporting 10^15 read/write cycles or 1000 million times more write cycles than EEPROM.

• Voltage range from 1.71V to 1.89V, 16Mbit density
• SPI F-RAM interface, no inrush current control, 40MHz frequency
• 24-ball FBGA package type
• 16Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8
• Virtually unlimited endurance of 1000 trillion (10^15) read/write
• Infineon instant non-volatile write technology, advanced high-reliability ferroelectric process
• Up to 40MHz frequency, supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Software protection using write disable (WRDI) instruction
• Manufacturer ID and product ID, unique device ID, serial number
• 24-ball FBGA package type, ambient temperature range from -40°C to +85°C