CY15B104Q-SXIT

CY15B104Q-SXIT is a CY15B104Q 4Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other nonvolatile memories. This is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM.

• 4Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 40MHz frequency
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0, 0), mode 3 (1, 1)
• Sophisticated write protection scheme, hardware protection using the write protect active-low WP pin
• Software protection using write disable instruction
• Low power consumption, 300µA active current at 1MHz
• Low-voltage operation: VDD = 2.0V to 3.6V, industrial temperature range from –40°C to +85°C
• 8-pin SOIC package