CY15B101N-ZS60XAT

The CY15B101N is a 64K × 16 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write-timing and high write-endurance make the F-RAM superior to other types of memory.The CY15B101N operation is similar to that of other RAM devices, and, therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read cycles may be triggered by CE\ or simply by changing the address and write cycles may be triggered by CE\ or WE\. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the CY15B101N ideal for nonvolatile memory applications requiring frequent or rapid writes.The device is available in a 400-mil, 44-pin TSOP-II surface-mount package. Device specifications are guaranteed over the Automotive-A temperature range -40 °C to +85 °C.

• 1-Mbit ferroelectric random access memory (F-RAM™)logically organized as 64K × 16
  • Configurable as 128K × 8 using UB\ and LB\
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention
  • No Delay™ writes
  • Page-mode operation for 30-ns cycle time
  • Advanced high-reliability ferroelectric process
• SRAM compatible
  • Industry-standard 64K × 16 SRAM pinout
  • 60-ns access time, 90-ns cycle time
• Superior to battery-backed SRAM modules
  • No battery concerns
  • Monolithic reliability
  • True surface-mount solution, no rework steps
  • Superior for moisture, shock, and vibration
• Low power consumption
  • Active current 7 mA (typ)
  • Standby current 120 µA (typ)
• Low-voltage operation: Vdd = 2.0 V to 3.6 V
• Automotive-A temperature: -40 °C to +85 °C
• 44-pin thin small outline package (TSOP) Type II