CY15B064J-SXE

CY15B064J-SXE is a 64-Kbit (8K × 8) serial (I²C) automotive F-RAM. It is a non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. It is capable of supporting 10^13 read/write cycles, or 10 million times more write cycles than EEPROM. It is ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.

• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast two-wire serial interface (I2C), up to 1MHz frequency
• Direct hardware replacement for serial (I²C) EEPROM
• Low power consumption
• Voltage operation VDD=3.0V to 3.6V
• AEC Q100 grade 1 compliant
• Standby current is 6µA max at TA=85°C
• Output leakage current is 1µA at VSS = VIN = VDD
• 8-pin SOIC package
• Automotive-E temperature range from -40°C to +125°C