CY14V104NA-BA45XI
NVRAM NVSRAM Parallel 4M-Bit 3.3V 48-Pin FBGA Tray
- RoHS 10 Compliant
- Tariff Charges
The Cypress CY14V104NA is a fast static RAM, with a non-volatile element in each memory cell. The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16 bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
- 25 ns and 45 ns access times
- Internally organized as 256 K × 16 (CY14V104NA)
- Hands off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
- RECALL to SRAM initiated by software or power-up
- Infinite read, write, and recall cycles
- 1-million STORE cycles to QuantumTrap
- 20 year data retention
- Core VCC = 3.0 V to 3.6 V; IO VCCQ = 1.65 V to 1.95 V
- Industrial temperature
- 48-ball fine-pitch ball grid array (FBGA) package
- Pb-free and restriction of hazardous substances (RoHS) compliance
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 52 mA | ||
| 4 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 3.3 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 256Kx16 | ||
| 48FBGA | ||
| 48 | ||
| 10 x 6 x 0.89 mm | ||
| 45 ns | ||
| Industrial | ||
| FBGA | ||
| 3.6 V | ||
| 3 V | ||
| 45 ns |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | 3A991B2A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |