CY14V101QS-BK108XIT

The CY14V101QS combines a 1-Mbit nvSRAM with a QPI interface. The QPI allows writing and reading the memory in either a single (one I/O channel for one bit per clock cycle), dual (two I/O channels for two bits per clock cycle), or quad (four I/O channels for four bits per clock cycle) through the use of selected opcodes.The memory is organized as 128Kbytes each consisting of SRAM and nonvolatile SONOS Quantum Trap cells. The SRAM provides infinite read and write cycles, while the nonvolatile cells provide highly reliable storage of data. Data transfers from SRAM to the nonvolatile cells (STORE operation) take place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile cells (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instructions.

• Density: 1-Mbit (128K × 8)
• Bandwidth
  • 108-MHz high-speed interface
  • Read and write at 54 MBps
• Serial Peripheral Interface
  • Clock polarity and phase modes 0 and 3
  • Multi I/O option - Single SPI (SPI), Dual SPI (DPI), and Quad SPI (QPI)
• High reliability
  • Infinite read, write, and RECALL cycles
  • One million STORE cycles to nonvolatile elements (SONOS FLASH Quantum trap)
  • Data retention: 20 years at 85 °C
• Read
  • Commands: Standard, Fast, Dual I/O, and Quad I/O
  • Modes: Burst Wrap, Continuous (XIP)
• Write
  • Commands: Standard, Fast, Dual I/O, and Quad I/O
  • Modes: Burst Wrap
• Data protection
  • Hardware: Through Write Protect Pin (WP)
  • Software: Through Write Disable instruction
  • Block Protection: Status Register bits to control protection
• Special instructions
  • STORE/RECALL: Acc