CY14B116N-ZSP25XI
Non-volatile SRAM, 16 Mbit, 1M x 16bit, 25 ns Read/Write, Parallel, 2.7 V to 3.6 V, TSOP-II-54
- RoHS 10 Compliant
- Tariff Charges
CY14B116N-ZSP25XI is a CY14B116N fast SRAM, with a non-volatile element in each memory cell. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM can be read and written an infinite number of times. The non-volatile data residing in the non-volatile elements do not change when data is written to the SRAM. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory.
- 16Mbit non-volatile static random access memory (nvSRAM)
- Hands-off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements is initiated by software
- RECALL to SRAM initiated by software or power-up, high reliability
- Infinite read, write, and RECALL cycles, 1 million STORE cycles to QuantumTrap
- Sleep mode operation, low power consumption, active current of 75mA at 45ns
- Industrial temperature range from –40°C to +85°C
- 25ns speed, 54-pin TSOP II speed
- 3V voltage rating, ×16 data bus
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1M x 16bit | ||
| 54 | ||
| 85 °C | ||
| -40 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | 3A991B2A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |