CY14B104LA-ZS25XI
NVRAM NVSRAM Parallel 4M-Bit 3V 44-Pin TSOP-II Tray
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Manufacturer:Infineon
Product Category:
Memory, Nonvolatile SRAM (NVSRAM)
Avnet Manufacturer Part #: CY14B104LA-ZS25XI
Secondary Manufacturer Part#: CY14B104LA-ZS25XI
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RoHS 10 Compliant -
Tariff Charges
CY14B104LA-ZS25XI is a 4Mbit (512K × 8) nvSRAM with a non-volatile element in each memory cell. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read
- 3.0V voltage, 4Mb density, × 8 data bus, 1st die revision
- 20ns, 25ns, and 45ns access times
- Hands off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements initiated by softwar
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Parallel | ||
| 8 Bit | ||
| 4 Mbit | ||
| Gold|Matte Tin | ||
| 260 | ||
| 70 mA | ||
| 25 ns | ||
| 4 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 44 | ||
| 3 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 512Kx8 | ||
| 44TSOP-II | ||
| 44 | ||
| 18.52 x 10.26 x 1.04 mm | ||
| 25 ns | ||
| Industrial | ||
| TSOP-II | ||
| 3.6 V | ||
| 2.7 V | ||
| NVSRAM | ||
| 25 ns |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: