CY14B101LA-SZ25XI
NVRAM NVSRAM Parallel 1M-Bit 3V 32-Pin SOIC Tube
- RoHS 10 Compliant
- Tariff Charges
The Cypress CY14B101LA is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 128 K bytes of 8 bits each or 64 K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.
- 20 ns, 25 ns, and 45 ns access times
- Internally organized as 128 K × 8 (CY14B101LA)
- Hands off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
- RECALL to SRAM initiated by software or power-up
- Infinite read, write, and recall cycles
- 1 million STORE cycles to QuantumTrap
- 20 year data retention
- Single 3 V +20%, -10% operation
- Industrial temperature
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1 Mbit | ||
| 32 | ||
| 85 °C | ||
| -40 °C | ||
| 25 ns | ||
| 3.6 V | ||
| 2.7 V | ||
| 25 ns |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |