CY14B101J2-SXI
NVSRAM, 128K x 8bit, 1Mbit, I2C, 2.7 to 3.6 V, Surface Mount, -40°C to 85°C, SOIC-8
- RoHS 10 Compliant
- Tariff Charges
The Cypress CY14B101J combines a 1-Mbit nvSRAM[2] with a nonvolatile element in each memory cell. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down (except for CY14X101J1). On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). The STORE and RECALL operations can also be initiated by the user through I2C commands.
- 1-Mbit nonvolatile static random access memory (nvSRAM)
- Internally organized as 128 K × 8
- STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using I2C command (Software STORE) or HSB pin (Hardware STORE)
- RECALL to SRAM initiated on power-up (Power-Up RECALL) or by I2C command (Software RECALL)
- Automatic STORE on power-down with a small capacitor (except for CY14X101J1)
- High reliability
- Infinite read, write, and RECALL cycles
- 1 million STORE cycles to QuantumTrap
- Data retention: 20 years at 85 °C
- High speed I2C interface
- Industry standard 100 kHz and 400 kHz speed
- Fast-mode Plus: 1 MHz speed
- High speed: 3.4 MHz
- Zero cycle delay reads and writes
- Write protection
- Hardware protection using Write Protect (WP) pin
- Software block protection for 1/4, 1/2, or entire array
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Serial (I2C) | ||
| 8 Bit | ||
| 1 Mbit | ||
| I2C | ||
| Gold|Tin | ||
| 260 | ||
| 1 mA | ||
| 900 ns | ||
| 1 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 8 | ||
| 3.3 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 128Kx8 | ||
| 8SOIC | ||
| 8 | ||
| 4.98 x 3.99 x 1.48 mm | ||
| 900 ns | ||
| Industrial | ||
| SOIC | ||
| 3.6 V | ||
| 2.7 V | ||
| NVSRAM | ||
| 900 ns |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |