BSZ070N08LS5ATMA1

Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

• OptiMOSâ„¢5 power transistor MOSFET
• Ideal for high frequency switching and synchronous rectification
• Optimized technology for DC/DC converters
• Excellent gate charger X RDS (on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, logic level, 100% avalanche tested
• Qualified according to JEDEC for target applications
• Higher solder joint reliability with enlarger source information
• 80V minimum drain-source breakdown voltage (VGS=0V, ID=1mA)
• PG-TSDSON-8-FL package, operating and storage temperature range from -55 to 150°C