BSZ040N06LS5ATMA1

BSZ040N06LS5ATMA1 is an OptiMOS™ 5 power MOSFET. Its logic level is highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. Potential applications are wireless charging, adapter, and telecom. Typical applications are 48V power distribution, domestic robots, and edge server solutions.

• Low RDS(on) in small package, low gate charge, lower output charge, logic level compatibility
• Higher power density designs, higher switching frequency
• Driven directly from microcontrollers (slow switching), system cost reduction
• 100% avalanche tested, superior thermal resistance
• Qualified according to JEDEC1 for target applications
• Drain-source breakdown voltage is 60V at VGS=0V, ID=1mA, Tj=25°C
• Drain-source on-state resistance is 4mohm maximum at VGS=10V, ID=20A, Tj=25°C
• Continuous drain current is 101A maximum at VGS=10V, TC=25°C
• PG-TSDSON-8 FL package
• Operating and storage temperature range from -55 to 150°C