BSZ019N03LSATMA1
Power MOSFET, N Channel, 30 V, 149 A, 0.0019 ohm, TSDSON-FL, Surface Mount
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: BSZ019N03LSATMA1
Secondary Manufacturer Part#: BSZ019N03LSATMA1
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RoHS 10 Compliant -
Tariff Charges
With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.
- OptiMOSâ„¢ power N-channel MOSFET
- Optimized for high performance buck converter(Server,VGA), very Low FOMQ OSS for high frequency SMPS
- Low FOMSW for high frequency SMPS
- Excellent gate charge xRDS (on) product (FOM), very low on-resistance RDS(on) at VGS=4.5V
- 100% avalanche tested, superior thermal resistance
- Qualified according to JEDEC for target applications
- 1.8K/W maximum thermal resistance, junction - case
- 30V minimum drain-source breakdown voltage (VGS=0V, ID=1mA)
- 0.4 to 1.6ohm gate resistance range (Tj=25°C)
- PG-TSDSON-8 FL package, operating and storage temperature range from -55 to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 40 | ||
| 1.9 | ||
| 30 | ||
| 2 | ||
| 8 | ||
| 150 °C | ||
| 69 | ||
| TSDSON | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: