BSC010NE2LSIATMA1
Power MOSFET, N Channel, 25 V, 100 A, 900 µohm, TDSON, Surface Mount
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: BSC010NE2LSIATMA1
Secondary Manufacturer Part#: BSC010NE2LSIATMA1
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RoHS 10 Compliant -
Tariff Charges
The BSC010NE2LSI is a N-channel Power MOSFET features reduced power losses and increased efficiency for all load conditions. With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency and system in package. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solution applications.
- Optimized for high performance buck converter
- Monolithic integrated Schottky like diode
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- 100% Avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free
- Reduces the number of phases in multiphase converters
- Green device
- Save space with smallest packages like CanPAKâ„¢
- Minimize EMI in the system making external snubber networks obsolete and products easy to design-in
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 100 | ||
| 1.05 | ||
| 25 | ||
| 2 | ||
| 8 | ||
| 150 °C | ||
| 96 | ||
| TDSON | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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