BSC009NE2LSATMA1
Power MOSFET, N Channel, 25 V, 100 A, 750 µohm, TDSON, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The BSC009NE2LS is a N-channel Power MOSFET features high DC and pulsed current capability. With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency. Lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, O-ring, e-fuse and HOT-SWAP application. The package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.
- Lowest ON-state resistance
- High DC and pulsed current capability
- Easy to design-in
- Increased battery lifetime/system efficiency
- Saving space (reducing the number of devices needed)
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 100 | ||
| 0.9 | ||
| 25 | ||
| 2.2 | ||
| 8 | ||
| 150 °C | ||
| 96 | ||
| TDSON | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |