BGS12SL6E6327XTSA1

The BGS12SL6 RF MOS switch is a general purpose 0.1 - 6.0 GHz SPDT Switch suitable for band/mode switching in cellular systems and WLAN applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 27.5 dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.35 dB in the 2.5 GHz range. The BGS12SL6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7x1.1mm2 and a low height of 0.31mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.

• 2 high-linearity TRx paths with power handling capability of up to 27.5 dBm
• High switching speed, ideal for WLAN and Bluetooth applications
• All ports fully bi-directional
• Low insertion loss
• Low harmonic generation
• High port-to-port isolation
• 0.1 to 6 GHz coverage
• High ESD robustness
• On-chip control logic
• Very small leadless and halogen free package TSLP-6-4 (0.7x1.1mm2) with super low height of 0.31 mm
• No decoupling capacitors required if no DC applied on RF lines
• RoHS compliant package