BGB707L7ESDE6327XTSA1

The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based on Infineon Technologies’ cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package.

• High performance general purpose wideband MMIC LNA
• ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM)
• Integrated active biasing circuit enables stable operating point against temperature- and processing-variations
• Excellent noise figure from Infineon´s reliable high volume SiGe:C technology
• High gain and linearity at low current consumption
• Supply voltage: 1.8 V to 4.0 V
• Adjustable operating current 2.1 mA to 25 mA by external resistor
• Power-off function
• Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3
• Pb-free (RoHS compliant) and halogen-free package
• Qualification report according to AEC-Q101 available