BGA7L1BN6E6327XTSA1

BGA7L1BN6E6327XTSA1 is a front-end low noise amplifier for LTE. The device features a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down Vcc.

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• Digital on/off switch (1V logic high level), 716 to 960MHz operating frequency range
• B7HF silicon germanium technology, RF output internally matched to 50 ohm
• Only 1 external SMD component necessary
• Supply voltage range from 1.5 to 3.6V at TA=25°C, VCC=2.8V, VC, ON=2.8V, VC,BYP=0V, f=716 - 960MHz
• Supply current is 4.9mA typ at high gain, TA=25°C, VCC=2.8V, VC, ON=2.8V, VC,BYP=0V, f=716-960MHz
• Insertion power gain is 13.6dB typ at high gain mode, f=840MHz
• Noise figure is 0.75dB typ at high gain mode, ZS=50 ohm
• Ultra small TSNP-6-2 leadless package
• Ambient temperature range from -40 to 85°C