BFS481H6327XTSA1
Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 175 mW, 20 mA, SOT-363
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Manufacturer:Infineon
Product Category:
Discretes, RF Discretes, RF Bipolar Transistors
Avnet Manufacturer Part #: BFS481H6327XTSA1
Secondary Manufacturer Part#: BFS481H6327XTSA1
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RoHS 10 Compliant -
Tariff Charges
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
- For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
- fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
- Two (galvanic) internal isolated Transistors in one package
- Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads
- Qualification report according to AEC-Q101 available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 12 | ||
| 70 | ||
| 6 | ||
| 150 °C | ||
| 175 | ||
| AEC-Q101 | ||
| SOT-363 | ||
| Surface Mount | ||
| NPN | ||
| 8 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |
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