BFR193E6327HTSA1
Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 580 mW, 80 mA, SOT-23
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Manufacturer:Infineon
Product Category:
Discretes, RF Discretes, RF Bipolar Transistors
Avnet Manufacturer Part #: BFR193E6327HTSA1
Secondary Manufacturer Part#: BFR193E6327HTSA1
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RoHS 10 Compliant -
Tariff Charges
The BFR 193 E6327 is a NPN low-noise silicon Bipolar RF Transistor for low noise, high-gain amplifiers up to 2GHz. The device is suitable for various applications like cellular and cordless phones, DECT, Tuners, FM and RF modems.
- For low noise, high-gain amplifiers up to 2 GHz
- For linear broadband amplifiers
- fT = 8 GHz, NFmin = 1 dB at 900 MHz
- Pb-free (RoHS compliant) package
- Qualification report according to AEC-Q101 available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 12 | ||
| 70@30mA@8V | ||
| 3 | ||
| 150 °C | ||
| SOT-23 | ||
| Surface Mount | ||
| NPN | ||
| 8000 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |
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