BFP840ESDH6327XTSA1

The BFx840xESD product family is a series of discrete hetero-junction bipolar transistors (HBT) specifically designed for high performance 5 GHz band low noise amplifier (LNA) solutions for Wi-Fi connectivity applications.

• Robust very low noise amplifier based on Infineon´s reliable high volume SiGe:C technology
• Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
• Very high transition frequency fT = 80 GHz enables very low noise figure at high frequencies: NFmin = 0.85 dB at 5.5 GHz, 1.8 V, 6 mA
• High gain |S21|2= 18.5 dB at 5.5 GHz, 1.8 V, 10 mA
• OIP3 = 23 dBm at 5.5 GHz, 1.5 V, 6 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads
• Qualification report according to AEC-Q101 available