BFP760H6327XTSA1

The BFP760 is a linear and very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as low as 10 mA the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

• Very low noise amplifier based on Infineon´s reliable, high volume SiGe:C technology
• High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
• High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA
• NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
• Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA
• Low power consumption, ideal for mobile applications
• Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads
• Qualification report according to AEC-Q101 available