BFP720FH6327XTSA1

The BFP720F is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter TSFP-4 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720F is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

• High performance general purpose wideband LNA transistor
• Operation voltage: 1.0 V to 4.0 V
• Transistor geometry optimized for low current applications
• 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• 0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz
• High linearity OP1dB = 7 dBm and OIP3 = 21 dBm at 5.5 GHz and low current consumption of 13 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads
• Qualification report according to AEC-Q101 available