BFP720FESDH6327XTSA1

The BFP720FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP720FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

• Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 5.5 GHz, 5 mA
• 26 dB maximum gain Gms typical at 2.4 GHz, 22 dB Gms at 5.5 GHz, 15 mA
• 21 dBm OIP3 typical at 5.5 GHz, 15 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads
• Qualification report according to AEC-Q101 available