BFP650FH6327XTSA1
Trans GP BJT NPN 4V 0.15A 4-Pin TSFP T/R
- RoHS 10 Compliant
- Tariff Charges
NPN Silicon Germanium RF Transistor
- For medium power amplifiers and driver stages
- Based on Infineon' s reliable high volume Silicon Germanium technology
- High OIP3 and P-1dB
- Ideal for low phase noise oscilators
- Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise figure NFmin = 0.8 dB at 1.8 GHz
- Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads
- Qualification report according to AEC-Q101 available
Technical Attributes
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| Description | Value | |
|---|---|---|
| 13 | ||
| 110 | ||
| 4 | ||
| 150 °C | ||
| 500 | ||
| TSFP | ||
| Surface Mount | ||
| NPN | ||
| 42 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |