BFP450H6433XTMA1

The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequency is approximately 24 GHz, hence the device offers high power gain at frequencies up to 3 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

• Highly linear low noise driver amplifier for all RF frontends up to 3 GHz
• Based on Infineon´s reliable high volume 25 GHz silicon bipolar technology
• Output compression point OP1dB = 19 dBm at 90 mA, 3 V, 1.9 GHz, 50 ? system
• Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 ? system
• Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
• Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
• Pb-free (RoHS compliant) and halogen-free package with visible leads
• Qualification report according to AEC-Q101 available