AUIRS21814STR
MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Non-Inv 14-Pin SOIC N T/R
- RoHS 10 Compliant
- Tariff Charges
The AUIRS21814S is high voltage, high speed power MOSFET and IGBT drivers with independent high and low - side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage – dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V and 5 V input logic compatible
- Matched propagation delay for both channels
- Logic and power ground +/-5V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current capability (typical) 1.9A/2.3A
- Lead free, roHS Compliant
- Automotive qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 160 ns | ||
| CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 35 ns | ||
| 330 ns | ||
| 60 ns | ||
| 35 ns | ||
| 35 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 14 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 200 ns | ||
| 14SOIC N | ||
| 2.3 A | ||
| 14 | ||
| IGBT, MOSFET, Mosfet | ||
| 8.74 x 3.99 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 2.3 A | ||
| 1.9 A | ||
| SOIC N | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |