AUIRS21811STR
MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Non-Inv 8-Pin SOIC T/R
- RoHS 10 Compliant
- Tariff Charges
The AUIRS21811S is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10V to 20V
- Under voltage lockout for both channels
- 3.3V and 5V input logic compatible
- Matched propagation delay for both channels
- Lower di/dt gate driver for better noise immunity
- Output source/sink current capability of 1.9A/2.3A typical
- Lead-free, RoHS compliant
- Automotive qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 135 ns | ||
| 3.3V|5V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 35 ns | ||
| 230 ns | ||
| 60 ns | ||
| 35 ns | ||
| 35 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 135 ns | ||
| 8SOIC | ||
| 2.3 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 2.3 A | ||
| 1.9 A | ||
| SOIC | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |