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AUIRS21811STR

MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Non-Inv 8-Pin SOIC T/R

Manufacturer:Infineon
Avnet Manufacturer Part #: AUIRS21811STR
Secondary Manufacturer Part#: AUIRS21811STR
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The AUIRS21811S is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10V to 20V
  • Under voltage lockout for both channels
  • 3.3V and 5V input logic compatible
  • Matched propagation delay for both channels
  • Lower di/dt gate driver for better noise immunity
  • Output source/sink current capability of 1.9A/2.3A typical
  • Lead-free, RoHS compliant
  • Automotive qualified

Technical Attributes

Find Similar Parts

Description Value
Non-Inverting
High and Low Side
135 ns
3.3V|5V|CMOS|LSTTL
CMOS, TTL, TTL
Matte Tin
260
35 ns
230 ns
60 ns
35 ns
35 ns
Surface Mount
MSL 3 - 168 hours
2
8
2
2
-40 to 125 °C
125 °C
-40 °C
135 ns
8SOIC
2.3 A
8
IGBT, MOSFET, Mosfet
5 x 4 x 1.5 mm
No
600 V
2.3 A
1.9 A
SOIC
20 V
10 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542310075
Schedule B: 8542310075
In Stock :  0
Additional inventory
Factory Lead Time: 372 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $:
2500+
$1.3603
5000+
$1.33721
10000+
$1.31444
15000+
$1.29141
20000+
$1.26834