AUIRS2117STR
MOSFET DRVR 600V 0.6A 1-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC T/R
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Manufacturer:Infineon
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: AUIRS2117STR
Secondary Manufacturer Part#: AUIRS2117STR
-
RoHS 10 Compliant -
Tariff Charges
The AUIRS2117S are high voltage, high speed power MOSFET and IGBT drivers. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high- side or low-side configuration which operates up to 600 V.
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage - dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout
- CMOS Schmitt-triggered inputs with pull-down
- (AUIRS2117S)
- Output in phase with input (AUIRS2117S) Leadfree, RoHS compliant
- Automotive qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Non-Inverting | ||
| High Side|Low Side | ||
| 140 ns | ||
| CMOS | ||
| Matte Tin | ||
| 260 | ||
| 65 ns | ||
| 225 ns | ||
| 130 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 1 | ||
| 8 | ||
| 1 | ||
| 1 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 140 ns | ||
| 8SOIC | ||
| 0.6 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 600 mA | ||
| 290 mA | ||
| SOIC | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |
Factory Lead Time: