2EDL23I06PJXUMA1

2EDL23I06PJXUMA1 is a 600V half-bridge gate driver with OCP and an integrated bootstrap diode. It contains devices, that control power devices like MOS transistors or IGBTs with a maximum blocking voltage of +600V in half-bridge configurations. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperature and voltage conditions. The two independent driver outputs are controlled at the low side using two different CMOS resp. LSTTL compatible signals, down up to 3.3V logic. The device includes an under-voltage detection unit with hysteresis characteristics which are optimised either for IGBT or MOSFET. The application includes motor drives, general purpose inverters, refrigeration compressors, home appliances, half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting.

• Infineon thin-film-SOI-technology, fully operational to +600V
• Low RDS(ON) bootstrap diode, floating channel designed for bootstrap operation
• Interlock, enable, fault, and over current protection, undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible, dV/dt immune ±50V
• Deadtime, interlock, function, 2.3A output current, IGBT target transistor
• 12.5V/11.6V typ level shift UVLO thresholds, bootstrap diode
• Input bias current is 35µA typical at (VLIN = 3.3V)
• Turn-on rise time is 48ns typical at (VLIN/HIN = 0 or 3.3V, CL = 4.9nF)
• Turn-off fall time is 37ns typical at (VLIN/HIN = 0 or 3.3V, CL = 4.9nF)
• Ambient temperature range from -40°C to 125°C, DSO-14 package