2ED2388S06FXUMA1
- RoHS 10 Compliant
- Tariff Charges
2ED2388S06FXUMA1 is a 650V half bridge gate driver with an integrated bootstrap diode. It is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is
- Unique Infineon thin-film-silicon on insulator (SOI)-technology
- Negative VS transient immunity of -100V, floating channel designed for bootstrap operation
- High-side floating well supply return voltage is 650V
- Peak output cu
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Isolated | ||
| SOIC | ||
| Surface Mount | ||
| 90 ns | ||
| Logic | ||
| 2 | ||
| 8 | ||
| 125 °C | ||
| -40 °C | ||
| 90 ns | ||
| IGBT, MOSFET | ||
| 700 mA | ||
| 290 mA | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |