2ED2388S06FXUMA1
- RoHS 10 Compliant
- Tariff Charges
2ED2388S06FXUMA1 is a 650V half bridge gate driver with an integrated bootstrap diode. It is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is
- Unique Infineon thin-film-silicon on insulator (SOI)-technology
- Negative VS transient immunity of -100V, floating channel designed for bootstrap operation
- High-side floating well supply return voltage is 650V
- Peak output cu
Technical Attributes
Find Similar Parts
Description | Value | |
---|---|---|
Half Bridge | ||
Isolated | ||
SOIC | ||
Surface Mount | ||
90 ns | ||
Logic | ||
2 | ||
8 | ||
125 °C | ||
-40 °C | ||
90 ns | ||
IGBT, MOSFET | ||
700 mA | ||
290 mA | ||
20 V | ||
10 V |
ECCN / UNSPSC / COO
Description | Value |
---|---|
Country of Origin: | RECOVERY FEE |
ECCN: | EAR99 |
HTSN: | 8542390050 |
Schedule B: | 8542390060 |