2ED020I12FIXUMA1
IGBT/MOSFET, 2-Channels, Half Bridge, High Side and Low Side, 2.5 A, 14 V to 18 V, 85 ns, 18 Pins, DSO
- RoHS 10 Compliant
- Tariff Charges
2ED020I12FIXUMA1 is a high voltage, high-speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high-side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3V and 5V TTL. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2kV. In addition, a general-purpose operational amplifier and a general-purpose comparator are provided which may be used for instance for current measurement or overcurrent detection.
- On-chip 1 ohm bootstrap diode
- CMOS Schmitt-triggered inputs with pull-down, non-inverting inputs
- Interlocking inputs, dedicated shutdown input with pull-up
- Power supply operating range from 14 to 18V
- High dV/dt immunity, matched propagation delay for both channels
- Low power consumption, general purpose operational amplifier
- 2.4mA typ high side quiescent supply current at (VSH = 15V)
- 85ns typ turn-on propagation delay at (GNDH = 0V 20% Vout)
- 20MHz typ OP gain-bandwidth product
- Storage temperature range from -55°C to 150°C, DSO-18 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| High and Low Side | ||
| Isolated | ||
| DSO | ||
| Surface Mount | ||
| 85 ns | ||
| CMOS|TTL | ||
| CMOS, Non-Inverting, TTL, Non-Invertin | ||
| Tin | ||
| 260 | ||
| 35 ns | ||
| 130 ns | ||
| 40 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 18 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 150 °C | ||
| -55 °C | ||
| 85 ns | ||
| 18DSO | ||
| 2 A | ||
| 18 | ||
| IGBT, MOSFET, Mosfet | ||
| 12.8 x 7.6 x 2.45 | ||
| No | ||
| Extended Industrial | ||
| 2 A | ||
| 1 A | ||
| DSO | ||
| 18 V | ||
| 14 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |