1EDI60I12AHXUMA1
MOSFET DRVR 10A 1-OUT Hi Side Inv/Non-Inv 8-Pin DSO T/R
- RoHS 10 Compliant
- Tariff Charges
EiceDRIVER™ Compact - Galvanically isolated single channel IGBT driver IC in a wide-body package with CT technology for 600V/1200V IGBT Modules.
Technical Attributes
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| Description | Value | |
|---|---|---|
| Inverting|Non-Inverting | ||
| High Side | ||
| Galvanically Isolated | ||
| DSO | ||
| Surface Mount | ||
| 300 ns | ||
| 3V to 15V|CMOS | ||
| Inverting, Non-Inverting, Non-Inv | ||
| Gold or Silver over Nickel Palladium | ||
| 260 °C | ||
| 19 ns | ||
| 17, 35 V | ||
| 330 ns | ||
| 20 ns | ||
| 330 ns | ||
| 330 ns | ||
| 3.1, 13 V | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 1 | ||
| 8 | ||
| 1 | ||
| 1 | ||
| 1000 MHz | ||
| 1 mA | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 300 ns | ||
| 8DSO | ||
| 10 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 6.4 x 7.6 x 2.45 | ||
| No | ||
| Extended Industrial | ||
| 9.4 A | ||
| 10 A | ||
| DSO | ||
| 17, 35 V | ||
| 3.1, 13 V | ||
| 5, 15 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |