1EDI20N12AFXUMA1
IGBT, MOSFET, SiC MOSFET Driver, 1 Channel, High Side, 3.5A, 3.1 V to 17 V, 125 ns, 8 Pins, DSO
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Manufacturer:Infineon
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: 1EDI20N12AFXUMA1
Secondary Manufacturer Part#: 1EDI20N12AFXUMA1
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RoHS 10 Compliant -
Tariff Charges
EiceDRIVER™ Compact - high voltage, high speed driver ICs for MOSFETs with CT technology are ideal for all topologies using CoolMOS™ in 3- and 4-pin packages
- Single channel isolated Gate Driver
- Input to output isolation voltage up to 1200 V
- For high voltage power FETs
- 4 A typical peak current at rail-to-rail outputs
- Separate source and sink outputs
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Inverting|Non-Inverting | ||
| Galvanically Isolated | ||
| 115 ns | ||
| CMOS | ||
| Inverting, Non-Inverting, Non-Inv | ||
| Tin | ||
| 260 | ||
| 19 ns | ||
| 130 ns | ||
| 20 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 1 | ||
| 8 | ||
| 1 | ||
| 1 | ||
| 4000 kHz | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 120 ns | ||
| 8DSO | ||
| 2 A | ||
| 8 | ||
| GaN, MOSFET, Mosfet | ||
| 5(Max) x 4(Max) x 1.65(Max) | ||
| EiceDRIVER 1EDI | ||
| No | ||
| Extended Industrial | ||
| 3.5 A | ||
| 4 A | ||
| DSO | ||
| 17 V | ||
| 3.1 V | ||
| 5|15 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
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