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1EDI20N12AFXUMA1

IGBT, MOSFET, SiC MOSFET Driver, 1 Channel, High Side, 3.5A, 3.1 V to 17 V, 125 ns, 8 Pins, DSO

Manufacturer:Infineon
Avnet Manufacturer Part #: 1EDI20N12AFXUMA1
Secondary Manufacturer Part#: 1EDI20N12AFXUMA1
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

EiceDRIVER™ Compact - high voltage, high speed driver ICs for MOSFETs with CT technology are ideal for all topologies using CoolMOS™ in 3- and 4-pin packages

  • Single channel isolated Gate Driver
  • Input to output isolation voltage up to 1200 V
  • For high voltage power FETs
  • 4 A typical peak current at rail-to-rail outputs
  • Separate source and sink outputs

Technical Attributes

Find Similar Parts

Description Value
Inverting|Non-Inverting
Galvanically Isolated
115 ns
CMOS
Inverting, Non-Inverting, Non-Inv
Tin
260
19 ns
130 ns
20 ns
Surface Mount
MSL 3 - 168 hours
1
8
1
1
4000 kHz
-40 to 125 °C
125 °C
-40 °C
120 ns
8DSO
2 A
8
GaN, MOSFET, Mosfet
5(Max) x 4(Max) x 1.65(Max)
EiceDRIVER 1EDI
No
Extended Industrial
3.5 A
4 A
DSO
17 V
3.1 V
5|15 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542390050
Schedule B: 8542390060
In Stock :  2500.0
Ships in 1 bus. day
Additional inventory
Factory Lead Time: 372 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $:
2500+
$0.74373
5000+
$0.72915
10000+
$0.71881
15000+
$0.70877
20000+
$0.69725