1EDI20N12AFXUMA1
IGBT, MOSFET, SiC MOSFET Driver, 1 Channel, High Side, 3.5A, 3.1 V to 17 V, 125 ns, 8 Pins, DSO
- RoHS 10 Compliant
- Tariff Charges
EiceDRIVER™ Compact - high voltage, high speed driver ICs for MOSFETs with CT technology are ideal for all topologies using CoolMOS™ in 3- and 4-pin packages
- Single channel isolated Gate Driver
- Input to output isolation voltage up to 1200 V
- For high voltage power FETs
- 4 A typical peak current at rail-to-rail outputs
- Separate source and sink outputs
Technical Attributes
Find Similar Parts
Description | Value | |
---|---|---|
Inverting|Non-Inverting | ||
Galvanically Isolated | ||
115 ns | ||
CMOS | ||
Inverting, Non-Inverting, Non-Inv | ||
Tin | ||
260 | ||
19 ns | ||
130 ns | ||
20 ns | ||
Surface Mount | ||
MSL 3 - 168 hours | ||
1 | ||
8 | ||
1 | ||
1 | ||
4000 kHz | ||
-40 to 125 °C | ||
125 °C | ||
-40 °C | ||
120 ns | ||
8DSO | ||
2 A | ||
8 | ||
GaN, MOSFET, Mosfet | ||
5(Max) x 4(Max) x 1.65(Max) | ||
EiceDRIVER 1EDI | ||
No | ||
Extended Industrial | ||
3.5 A | ||
4 A | ||
DSO | ||
17 V | ||
3.1 V | ||
5|15 V |
ECCN / UNSPSC / COO
Description | Value |
---|---|
Country of Origin: | RECOVERY FEE |
ECCN: | EAR99 |
HTSN: | 8542390050 |
Schedule B: | 8542390060 |