1ED3320MC12NXUMA1
Gate Driver, 1 Channels, Isolated, High Side, IGBT, MOSFET, SiC MOSFET, 16 Pins, WSOIC
- RoHS 10 Compliant
- Tariff Charges
1ED3320MC12NXUMA1 is an EiceDRIVER™ single-channel 5.7KV (rms) isolated gate driver IC with DESAT and soft-off. It is an EiceDRIVER™ enhanced single-channel galvanically isolated gate driver with integrated protection features such as short circuit protection, active miller clamp, and active shutdown for IGBT, MOSFET, and SiC MOSFET. It provides a typical output current upto +6A / -8.5A. All logic pins are 3.3V and 5V CMOS-compatible and can be directly connected to a microcontroller. Data transfer across the galvanic isolation is realized by the integrated coreless transformer (CT) technology. It is used in applications such as industrial motor drives - compact, standard, premium, servo drives, solar inverters, e.g., for 1500V (DC) systems, UPS systems, high voltage DC-DC converters, and DC-AC inverters, welding, commercial and agricultural vehicles (CAV), commercial air-conditioning (CAC), high-voltage isolated DC-DC converters, isolated switch mode power supplies (SMPS).
- 3.3A/-6A typical gate drive current, OUTH/OUTL output
- 12V typical UVLO, soft-off switch
- Single channel galvanically isolated coreless transformer (CT) gate driver
- High common-mode transient immunity CMTI 300kV/µs
- Suitable for operation at high ambient temperature and in fast switching applications
- UL 1577 (File E311313) with VISO,test = 6840V (rms) for 1s, VISO = 5700V (rms) for 60s
- Reinforced insulation according to VDE 0884-11 (certificate no. 40052310)
- Input IN+, IN-, /RST to output propagation delay variation part to part is 15ns maximum
- Insulation capacitance is 1.4pF typical
- Ambient temperature range from -40°C to 125°C, DSO-16 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| null | ||
| Galvanically Isolated | ||
| DSO-W | ||
| Surface Mount | ||
| 80 ns | ||
| CMOS, Inverting, Non-Inverting, Inverting, N | ||
| 1 Channel | ||
| 16 Pins | ||
| 125 °C | ||
| -40 °C | ||
| 86 ns | ||
| IGBT, MOSFET, SiC MOSFET | ||
| null | ||
| null | ||
| 6 A | ||
| 3.3 A | ||
| 5.5 V | ||
| 3.1 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |