1ED3142MU12FXUMA1
Gate Driver, 1 Channels, Isolated, High Side, IGBT, Si and SiC MOSFET, 8 Pins, DSO
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RoHS 10 Compliant -
Tariff Charges
1ED3142MU12FXUMA1 is a galvanically isolated single-channel 3KV (rms) isolated gate driver IC with separate outputs for use with 600V/650V/1200V/1700V/2300V IGBTs, Si and SiC MOSFETs in DSO-8 150 mil package. The input logic pins operate on a wide input voltage range from 3V to 6.5V using CMOS threshold levels to support 3.3V microcontrollers. Data transfer across the isolation barrier is realized by the coreless transformer technology. Typical applications include EV charging, energy storage systems, solar inverters, server and telecom switched mode power supplies (SMPS), UPS-systems, AC and brushless DC motor drives, Commercial air-conditioning (CAC), high voltage DC-DC converter and DC-AC inverter.
- 12.5V/13.6V typical (Vuvlol2/Vuvloh22)
- 6A/6.5A typical output current source/sink
- UL 1577 certification
- 45ns propagation delay with 7ns part-to-part matching (skew)
- 35V absolute maximum output supply voltage
- High common-mode transient immunity CMTI 300KV/µs
- Separate source and sink outputs with active shutdown and short circuit clamping
- Galvanically isolated coreless transformer gate driver
- Suitable for operation at high ambient temperature and in fast switching applications
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| High Side | ||
| Isolated | ||
| DSO | ||
| Surface Mount | ||
| 45 ns | ||
| CMOS | ||
| 1 | ||
| 8 | ||
| 125 °C | ||
| -40 °C | ||
| 45 ns | ||
| IGBT, Si and SiC MOSFET | ||
| 6.5 A | ||
| 6 A | ||
| 17 V | ||
| 3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
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