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GS880F32CGT-7.5IV

SRAM Chip Sync Quad 2.5V/3.3V 9M-Bit 256K x 32 7.5ns 100-Pin TQFP Bulk

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS880F32CGT-7.5IV
Secondary Manufacturer Part#: GS880F32CGT-7.5IV
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The GS880F32CGT is a 9,437,184-bit (8,388,608-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.Controls :Addresses, data I/Os, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance.Designing For Compatibility :The JEDEC standard for Burst RAMS calls for a FT mode pin option on Pin 14. Board sites for flow through Burst RAMS should be designed with VSS connected to the FT pin location to ensure the broadest access to multiple vendor sources. Boards designed with FT pin pads tied low may be stuffed with GSI’s pipeline/flow through-configurable Burst RAMs or any vendor’s flow through or configurable Burst SRAM. Boards designed with the FT pin location tied high or floating must employ a non-configurable flow through Burst RAM, like this RAM, to achieve flow through functionality.Byte Write and Global Write :Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs.Sleep Mode :Low power (Sleep m

  • Flow Through mode operation; Pin 14 = No Connect
  • 2.5 V or 3.3 V +10%/–10% core power supply
  • 2.5 V or 3.3 V I/O supply
  • LBO pin for Linear or Interleaved Burst mode
  • Internal input resistors on mode pins allow floating mode pins
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard 100-lead TQFP package
  • RoHS-compliant 100-lead TQFP package available

Technical Attributes

Find Similar Parts

Description Value
18 Bit
Flow-Through
SDR
9 Mbit
150 mA
2.7, 3.6 V
7.5 ns
9 Mbit
2.3, 3 V
Surface Mount
100
32 Bit
32 Bit
4
256 kWords
-40 to 85 °C
85 °C
-40 °C
100TQFP
100
14 x 20 x 1.4 mm
0
Industrial
Synchronous SRAM
TQFP
2.7, 3.6 V
2.3, 3 V
2.5, 3.3 V
Synchronous
2.5, 3.3 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:72  Mult:72  
USD $:
72+
$21.3444
144+
$20.5128
288+
$19.6812
432+
$18.8496
576+
$18.5031