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GS8642Z18GB-200IV

SRAM Chip Sync Dual 1.8V/2.5V 72M-Bit 4M x 18 7.5ns/3ns 119-Pin F-BGA Tray

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS8642Z18GB-200IV
Secondary Manufacturer Part#: GS8642Z18GB-200IV
  • Legend Information Icon RoHS 10 Compliant
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The GS8642Z18B is a 72Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.The GS8642Z18B may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.The GS8642Z18B is implemented with GSI's high performance CMOS technology and is available in a JEDEC-standard 119-bump, 165-bump or 209-bump BGA package.

  • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through ™, NoBL™ and ZBT™ SRAMs
  • 2.5 V or 3.3 V +10%/–10% core power supply
  • 2.5 V or 3.3 V I/O supply
  • User-configurable Pipeline and Flow Through mode
  • ZQ mode pin for user-selectable high/low output drive
  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • LBO pin for Linear or Interleave Burst mode
  • Pin-compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
  • Byte write operation (9-bit Bytes)
  • 3 chip enable signals for easy depth expansion
  • ZZ Pin for automatic power-down
  • 3rd Generation, Green 14 mm x 22 mm, 119 BGA

Technical Attributes

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Description Value
22 Bit
Flow-Through|Pipelined
200 MHz
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260
255@Flow-Through|290@Pipelined mA
2, 2.7 V
7.5@Flow-Through|3@Pipelined ns
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1.7, 2.3 V
Surface Mount
MSL 3 - 168 hours
119
18 Bit
18 Bit
2
4 MWords
-40 to 85 °C
85 °C
-40 °C
119F-BGA
119
22 x 14 x 1.26 mm
No
Industrial
Synchronous NBT SRAM
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1.7, 2.3 V
1.8, 2.5 V
Synchronous
1.8, 2.5 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:84  Mult:84  
USD $:
84+
$149.0412
168+
$143.2344
336+
$137.4276
504+
$131.6208
672+
$129.2013