GS8342TT20BGD-500I

The GS8342T20BD is a built in compliance with the -II+ SRAM pin out standard for Common I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. The GS8342T20BD -II+ SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.Clocking and Addressing Schemes: The GS8342T20BD -II+ SRAMs are synchronous devices. They employ two input register clock inputs, K and K. K and K are independent single-ended clock inputs, not differential inputs to a single differential clock input buffer.Each internal read and write operation in a -II+ B2 RAM is two times wider than the device I/O bus. An input data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore the address field of a -II+ B2 RAM is always one address pin less than the advertised index depth (e.g., the 4M x 8 has a 2M addressable index).

• 2.5 Clock Latency
• Simultaneous Read and Write Sigma DDRTM Interface
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 3rd Generation, Green, 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available