GS8342T19BD-300I

The GS8342T19BD are built in compliance with the -II+ SRAM pin out standard for Common I/O synchronous SRAMs. They are 37,748,736 (36Mb) SRAMs. The GS8342T19BD -II+ SRAMs are just one element in a family of lo w power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.

• 2.0 Clock Latency
• Simultaneous Read and Write ™ Interface
• Common I/O bus
• JEDEC-standard pin out and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 13 mm x 15 mm, 165 FPBGA
• RoHS-compliant 165-bump BGA package available
• 32MB or 36MB product family