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GS8342S36BD-400I

SRAM Chip Sync Dual 1.8V 36M-Bit 1M x 36 0.45ns 165-Pin FBGA

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS8342S36BD-400I
Secondary Manufacturer Part#: GS8342S36BD-400I
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The GS8342S36BD is a built in compliance with the Sigma SIO DDR-II SRAM pin out standard for Separate I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. These are the first in a family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.Clocking and Addressing Schemes: A Burst of 2 Sigma SIO DDR-II SRAM is a synchronous device. It employs dual input register clock inputs, K and K. The device also allows the user to manipulate the output register clock input quasi independently with dual output register clock inputs, C and C. If the C clocks are tied high, the K clocks are routed internally to fire the output registers instead. Each Burst of 2 Sigma SIO DDR-II SRAM also supplies Echo Clock outputs, CQ and CQ, which are synchronized with read data output. When used in a source synchronous clocking scheme, the Echo Clock outputs can be used to fire input registers at the data’s destination.Each internal read and write operation in a Sigma SIO DDR-II B2 RAM is two times wider than the device I/O bus. An input data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore, the address field of a Sigma SIO DDR-II B2 is always one address pin less than the advertised index depth (e.g., the 4M x 8 has an 2M addressable index).

  • Simultaneous Read and Write Sigma SIO™ Interface
  • JEDEC-standard pinout and package
  • Dual Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • DLL circuitry for wide output data valid window and future frequency scaling
  • Burst of 2 Read and Write
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation
  • Fully coherent read and write pipelines
  • ZQ mode pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • 3rd Generation, 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
  • RoHS-compliant 165-bump BGA package available

Technical Attributes

Find Similar Parts

Description Value
19 Bit
Pipelined
400 MHz
DDR
36 Mbit
400 MHz
915 mA
0.45 ns
36 Mbit
Surface Mount
165
36 Bit
36 Bit
2
1 MWords
-40 to 100 °C
100 °C
-40 °C
165FBGA
165
15 x 13 x 0.94 mm
No
Industrial
SigmaSIO DDR SRAM
FBGA
1.8 V
Synchronous
1.8000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
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144+
$56.7336
288+
$54.5232
576+
$52.3128
864+
$50.1024
1152+
$49.1814