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GS8321Z18AD-250V

SRAM Chip Sync Dual 1.8V/2.5V 36M-Bit 2M x 18 5.5ns/3ns 165-Pin FBGA

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS8321Z18AD-250V
Secondary Manufacturer Part#: GS8321Z18AD-250V
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The GS8321Z18A is a 36Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable, ZZ and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.The GS8321Z18A may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.The GS8321Z18A is implemented with GSI's high performance CMOS technology and is available in JEDEC-standard 165-bump BGA package.

  • User-configurable Pipeline and Flow Through mode
  • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization
  • Fully pin-compatible with both pipelined and flow through ™, NoBL™ and ZBT™ SRAMs
  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • 2.5 V, or 3.3 V +10%/–10% core power supply
  • LBO pin for Linear or Interleave Burst mode
  • Pin-compatible with 2Mb, 4Mb, 8Mb, and 18Mb devices
  • Byte write operation (9-bit Bytes)
  • 3 chip enable signals for easy depth expansion
  • ZZ pin for automatic power-down
  • JEDEC-standard 165-bump BGA package
  • 2nd Generation, 13 mm x 15 mm, 165 FPBGA

Technical Attributes

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Description Value
21 Bit
Flow-Through|Pipelined
250 MHz
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Tin-Lead
230@Flow-Through|280@Pipelined mA
2, 2.7 V
5.5@Flow-Through|3@Pipelined ns
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Surface Mount
165
18 Bit
18 Bit
2
2 MWords
0 to 85 °C
85 °C
0 °C
165FBGA
165
15 x 13 x 0.94 mm
No
Commercial
Synchronous NBT SRAM
FBGA
2, 2.7 V
1.7, 2.3 V
1.8, 2.5 V
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1.8, 2.5 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:144  Mult:144  
USD $:
144+
$60.7992
288+
$58.4304
576+
$56.0616
864+
$53.6928
1152+
$52.7058