GS8182T09BD-250I

The GS8182T09BD are built in compliance with the -II SRAM pin out standard for Common I/O synchronous SRAMs. They are 18,874,368-bit (18Mb) SRAMs. The GS8182T09BD -II SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.

• Simultaneous Read and Write -II™ Interface
• Common I/O bus
• JEDEC-standard pin out and package
• Double Data Rate interface
• Byte Write (x18) and Nibble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 36Mb, and 72Mb and future 144Mb devices
• 13 mm x 15 mm, 165 FPBGA
• RoHS-compliant 165-bump BGA package available
• 1MB product Family