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GS8182S08BD-300

SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 8 0.45ns 165-Pin FBGA Tray

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS8182S08BD-300
Secondary Manufacturer Part#: GS8182S08BD-300
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

GS8182S08BD is a built in compliance with the Sigma SIO DDR-II SRAM pin out standard for Separate I/O synchronous SRAMs. They are 18,874,368-bit (18Mb) SRAMs. These are the first in a family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.Clocking and Addressing Schemes: A Burst of 2 Sigma SIO DDR-II SRAM is a synchronous device. It employs dual input register clock inputs, K and K. The device also allows the user to manipulate the output register clock input quasi independently with dual output register clock inputs, C and C. If the C clocks are tied high, the K clocks are routed internally to fire the output registers instead. Each Burst of 2 Sigma SIO DDR-II SRAM also supplies Echo Clock outputs, CQ and CQ, which are synchronized with read data output. When used in a source synchronous clocking scheme, the Echo Clock outputs can be used to fire input registers at the data’s destination. Each internal read and write operation in a Sigma SIO DDR-II B2 RAM is two times wider than the device I/O bus. An input data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore, the address field of a Sigma SIO DDR-II B2 is always one address pin less than the advertised index depth (e.g., the 2M x 8 has a 1M addressable index).

  • Simultaneous Read and Write Sigma SIO™ Interface
  • JEDEC-standard pinout and package
  • Dual Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • DLL circuitry for wide output data valid window and future frequency scaling
  • Burst of 2 Read and Write
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation
  • Fully coherent read and write pipelines
  • ZQ mode pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • Pin-compatible with present 9Mb, 36Mb, and 72Mb and future 144Mb devices
  • 3rd Generation, 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
  • RoHS-compliant 165-bump BGA package available

Technical Attributes

Find Similar Parts

Description Value
20 Bit
Pipelined
300 MHz
DDR
18 Mbit
Tin-Lead
300 MHz
485 mA
0.45 ns
18 Mbit
Surface Mount
165
8 Bit
8 Bit
2
2 MWords
0 to 70 °C
70 °C
0 °C
165FBGA
165
15 x 13 x 0.94 mm
No
Commercial
SigmaSIO DDR SRAM
FBGA
1.8 V
Synchronous
1.8000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 777 Weeks
Price for: Each
Quantity:
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144+
$17.25
288+
$16.974
576+
$16.698
1152+
$16.422
2304+
$16.146