GS816272CGC-333
SRAM Chip Sync Octal 2.5V/3.3V 18M-Bit 256K x 72-Bit 4.5ns/2.8ns 209-Pin FBGA Tray
- RoHS 10 Compliant
- Tariff Charges
The GS816272CC-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.Controls.Addresses, data I/Os, chip enable (E1), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance.Flow Through/Pipeline Reads.The function of the Data Output register can be controlled by the user via the FT mode . Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output Register.SCD and DCD Pipelined Reads.The GS816272CC-xxxV is an SCD (Single Cycle Deselect) and DCD (Dual Cycle Deselect) pipelined synchronous SRAM. DCD SRAMs pipeline disable commands to the same degree as read commands. SCD SRAMs pipeline deselect commands one stage less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect command has been captured in the input registers. DCD RAMs hold the deselect command for one full cycle and then begin turning off their outputs just after the second rising edge of clock. The user may configure this SRAM for either mode of operation using the
- FT pin for user-configurable flow through or pipeline operation
- Single/Dual Cycle Deselect selectable
- IEEE 1149.1 JTAG-compatible Boundary Scan
- ZQ mode pin for user-selectable high/low output drive
- 1.8 V or 2.5 V core power supply
- 1.8 V or 2.5 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to SCD x18/x36 Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 209-bump BGA package
- RoHS-compliant 209-bump BGA package available
Technical Attributes
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| Description | Value |
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.B |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |