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GS816136DD-200V

SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 6.5ns/3ns 165-Pin FBGA

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS816136DD-200V
Secondary Manufacturer Part#: GS816136DD-200V
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The GS816136D is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.Controls :Addresses, data I/Os, chip enable (E1), address burst control inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance.Flow Through/Pipeline Reads :The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising edge-triggered Data Output Register.SCD Pipelined Reads :The GS816136D is a SCD (Single Cycle Deselect) pipelined synchronous SRAM. DCD (Dual Cycle Deselect) versions are also available. SCD SRAMs pipeline deselect commands one stage less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect command has been captured in the input registers.Byte Write and Global Write :Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte W

  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • 1.8 V or 2.5 V core power supply
  • 1.8 V or 2.5 V I/O supply
  • LBO pin for Linear or Interleaved Burst mode
  • Internal input resistors on mode pins allow floating mode pins
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard 165-bump BGA package
  • RoHS-compliant 100-pin TQFP and 165-bump BGA packages available

Technical Attributes

Find Similar Parts

Description Value
19 Bit
Flow-Through|Pipelined
200 MHz
SDR
18 Mbit
210@Flow-Through|205@Pipelined mA
2, 2.7 V
6.5@Flow-Through|3@Pipelined ns
512K x 36bit
18 Mbit
1.7, 2.3 V
Surface Mount
165
36 Bit
36 Bit
4
512 kWords
0 to 85 °C
85 °C
0 °C
165FBGA
165
15 x 13 x 0.94 mm
No
Commercial
Synchronous SRAM
FBGA
2, 2.7 V
1.7, 2.3 V
1.8, 2.5 V
Synchronous
1.8, 2.5 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:144  Mult:144  
USD $:
144+
$32.0628
288+
$30.8136
576+
$29.5644
1152+
$28.3152
2304+
$27.7947