GS8160E32DGT-250V
SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 32 5.5ns 100-Pin TQFP Bulk
Click image to enlarge
Manufacturer:Gsi Technology
Avnet Manufacturer Part #: GS8160E32DGT-250V
Secondary Manufacturer Part#: GS8160E32DGT-250V
-
RoHS 10 Compliant -
Tariff Charges
The GS8160E32DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
- FT pin for user-configurable flow through or pipeline operation
- Dual Cycle Deselect (DCD) operation
- 2.5 V or 3.3 V +10%/–10% core power supply
- 2.5 V or 3.3 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- RoHS-compliant 100-lead TQFP package available
- 1MB product Family
- Green TQFP
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| Flow-Through|Pipelined | ||
| 250 MHz | ||
| SDR | ||
| 18 Mbit | ||
| 250 MHz | ||
| 245 mA | ||
| 2, 2.7 V | ||
| 5.5 ns | ||
| 512K x 32bit | ||
| 18 Mbit | ||
| 1.7, 2.3 V | ||
| Surface Mount | ||
| 100 | ||
| 32 Bit | ||
| 32 Bit | ||
| 4 | ||
| 512 kWords | ||
| 0 to 70 °C | ||
| 70 °C | ||
| 0 °C | ||
| 100TQFP | ||
| 100 | ||
| 14 x 20 x 1.4 mm | ||
| 0 | ||
| Commercial | ||
| Synchronous SRAM | ||
| TQFP | ||
| 2, 2.7 V | ||
| 1.7, 2.3 V | ||
| 1.8, 2.5 V | ||
| 1.8, 2.5 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.B |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: